1. Home
  2. Compound-Semiconductor-Enabled Renewable Energy System for Powering Critical Buildings in Africa
DEPARTMENT FOR SCIENCE, INNOVATION AND TECHNOLOGY

Compound-Semiconductor-Enabled Renewable Energy System for Powering Critical Buildings in Africa

IATI Identifier: GB-GOV-26-ISPF-STFC-DQ5ZR34-KMC3QB9-SALRU57
Project disclaimer
Disclaimer: The data for this page has been produced from IATI data published by DEPARTMENT FOR SCIENCE, INNOVATION AND TECHNOLOGY. Please contact them (Show Email Address) if you have any questions about their data.

Description

Africa’s power supply systems for critical loads, such as healthcare facilities, are transitioning to a more sustainable, efficient and reliable future. This is driven by the integration of renewable energy, which includes AC and DC power conversion enabled by power semiconductors switching at increasingly high frequencies (e.g., 10–100 kHz). The semiconductors’ operation causes power loss, reducing energy efficiency, and they are the most vulnerable components, counting for 20%–30% of the failure of power conversion systems. Improving the performance of the semiconductors will thus provide significant benefits in energy saving and system reliability improvement. For example, a 1% increase in efficiency in solar photovoltaic (PV) inverters and a 1% in reliability will make 150 GWh more energy available to critical healthcare facilities in Africa. This project’s overarching aim is to leverage the latest advancements in Silicon Carbon (SiC) semiconductor technology to develop high-efficiency and reliable solar photovoltaic-battery energy storage system (PV-BESS) for critical loads. Such compound semiconductors have low conduction loss, fast switching speed, and high operating temperature, which provides all potential for developing low-carbon PV-BESS. Challenges are that high-frequency switching of SiC semiconductors can increase thermal stress and create electromagnetic interference (EMI) due to their high-speed voltage transients (e.g. dv/dt over 10kV/us), affecting the reliability of the PV-BESS and lifespan of critical components such as capacitors and batteries. SiC semiconductors exhibit various material defects and variability, leading to variations and high non-linearities in their electro-thermal performances. Integrating SiC semiconductors into PV-BESS requires a better understanding of induced parasitic parameters and their coupling with components, including capacitors, inductances and gate drivers. To address these issues, the project has three research work packages (WP1-3): Develop accurate characterisation and modelling methods for semiconductor devices (WP1): Accurate SiC electro-thermal models and lifetime models will provide a new understanding of SiC semiconductors, which will be built to evaluate component efficiency and reliability under various environments. Integration optimisation of SiC-based PV-BESS (WP2): This involves studying and modelling the multiphysics coupling between SiC semiconductors and other components, investigation of induced parasitic parameters and system-level topology design of PV-BESS to reduce power conversion stages, thus improving overall efficiency and reliability. Validation and operation optimisation of SiC-based BESS in various operation conditions (WP3): This will investigate integration strategies and verify the benefits brought by SiC devices' advantages to ensuring the BESS’s high-efficiency and reliable operation in both normal and fault conditions. The main deliverables will include validated tools and a testbed for modelling and characterisation of SiC semiconductors (WP1), hardware-in-the-loop demonstrator for validating the SiC-based PV-BESS (WP2), and optimal operation strategies for PV-BESS (WP3). These will be useful to physics R&D institutions, renewable equipment vendors, and power system operators. The project will involve international partnerships with the University of Nairobi, with support from Scottish Power Energy Networks (SPEN) and Toshiba Europe. Researchers involved will benefit from the unique collaboration and training, and the project will help Africa build new physics research capacities in the renewable energy and semiconductor sectors. The project output will boost the PV-BESS’ energy conversion efficiency by 1%–2%, and extend their mean-time-between-failures by 20%. Developed compound semiconductor technologies will have a wider impact across applied industries, including electrified transportation sectors, robotics and aerospace. The integration and BESS technologies can be extended to generic low—and medium-voltage energy systems.

Objectives

ISPF aims to foster prosperity by solving shared global research and innovation challenges. This will be done through working closely with international partners to: support research excellence and build the knowledge and technology of tomorrow strengthen ties with international partners that share our values; enable researchers and innovators to cultivate connections, follow their curiosity and pioneer transformations internationally, for the good of the planet. Activities under ISPF ODA aim to deliver research and innovation partnerships with low- and middle-income countries.


Location

The country, countries or regions that benefit from this Programme.
Kenya
Disclaimer: Country borders do not necessarily reflect the UK Government's official position.

Status Implementation

The current stage of the Programme, consistent with the International Aid Transparency Initiative's (IATI) classifications.

Programme Spend

Programme budget and spend to date, as per the amounts loaded in financial system(s), and for which procurement has been finalised.

Participating Organisation(s)

Help with participating organisations

Accountable:Organisation responsible for oversight of the activity

Extending: Organisation that manages the budget on behalf of the funding organisation.

Funding: Organisation which provides funds.

Implementing: Organisations implementing the activity.

Sectors

Sector groups as a percentage of total Programme budget according to the OECD Development Assistance Committee (DAC) classifications.

Budget

A comparison across financial years of forecast budget and spend to date on the Programme.

Download IATI Data for GB-GOV-26-ISPF-STFC-DQ5ZR34-KMC3QB9-SALRU57